ACCEL INDUSTRIAL LIMITED

Thousands of tiny transistors, diodes, resistors and capacitors are fabricated on a semiconductor wafer forms integrated circuit.there are two types of ic, CMOS ic and digital ic. MOSFETs come in four different types. They may be enhancement or depletion mode, and they may be n-channel or p-channel.There are also logic-level MOSFETs and normal MOSFETs.

Part number: BSS123
Produced by Fairchild
0.17A, 100V. RDS(ON)=6Ω@VGS=10VRDS(ON)=10Ω@VGS=4.5V
N-Channel Logic Level Enhancement Mode Field Effect Transistor, These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance, while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. The BSS123 are packaged in reel, SOT-23, 3000 pcs per reel. Lead free.

Part number: FQA11N90
Produced by Fairchild
900V N-Channel MOSFET
11.4A, 900V, RDS(on)=0.96Ω@VGS=10V, Low gate charge (typical 72nC). Low Crss (typical 30pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, These N-Channel Mosfet are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well, suited for high efficiency switch mode power supply. FQA11N90 is packed in TO-3P, 450 pcs per box, Lead free.

Part number: 2SK2996
Produced by Toshiba
Silicon N Channel MOS Type (π-MOSV)
DC-DC Converter, Relay Drive and Motor Drive. Applications. Low drain source ON resistance : RDS(ON)=0.74Ω(typ.), High forward transfer admittance:|Yfs|=6.8S(typ.), Low leakage current:IDSS=100μA (max) (VDS=600V), Enhancement mode:Vth=2.0~4.0V (VDS=10 V, ID=1mA). 2K2996 is packed by box, TO-220, 500 pcs per box.

Part number: 2SK2611
Produced by Toshiba
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC.DC Converter,Relay Drive and Motor Drive Applications.
Please use devices on condition that the channel temperature is below 150°C, VDD=90V, Tch=25°C (initial), L=15mH, RG=25Ω, IAR=9A.Repetitive rating: Pulse width limited by maximum channel temperature. 2SK2611 is an electrostatic sensitive device. Please handle with caution.